Gallium Arsenide

Gallium arsenide is an important semiconductor material with high electron mobility and optoelectronic properties.

Gallium arsenide is a direct transition material. In the visible light range with high peak values in the solar spectrum, the light absorption coefficient of gallium arsenide material is much higher than that of silicon and other semiconductor materials, and the photoelectric conversion efficiency is as high as 45%.

Strong radiation resistance, more suitable for space environments. Good high temperature resistance and can work stably under 1000 times sunlight.

Advantages

·  High photoelectric conversion efficiency
·  High absorption coefficient
·  Anti-radiation
·  High temperature resistance